THERMAL SCIENCE

International Scientific Journal

Authors of this Paper

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Feng Dai

,

Zhong-Liang Pan

OPTIMIZED METHOD FOR THERMAL THROUGH SILICON VIA PLACEMENT WITH NON-UNIFORM HEAT SOURCES IN 3-D-IC

ABSTRACT
In the past few years, thermal through silicon via (TTSV) has been experimentally investigated as an effective heat dissipation path. Although a lot of heat dissipation-related issues have been solved in 3-D integrated circuit (3-D-IC), there are neglections in TTSV placement with non-uniform heat sources so far. In this study, a unique optimization is proposed to locate TTSV while effectively alleviating hot spots in 3-D-IC. The thermal dissipation of non-uniform heat sources are studied using the finite element method. The simulation results show that the minimum temperature is reduced by 2.1% compared with peak temperature in the single-layer chip, and by 1.9% in the three-layer chip.
KEYWORDS
three-dimensional integrated circuit, non-uniform, optimized method, cost function, thermal through silicon via
PAPER SUBMITTED: 2022-08-01
PAPER REVISED: 2022-12-11
PAPER ACCEPTED: 2022-12-16
PUBLISHED ONLINE: 2023-02-11
DOI REFERENCE: https://doi.org/10.2298/TSCI220801021D
CITATION EXPORT: view in browser or download as text file
THERMAL SCIENCE YEAR 2023, VOLUME 27, ISSUE Issue 5, PAGES [3551 - 3559]
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Optimized method for thermal through silicon via placement with non-uniform heat sources in 3-D-IC

© 2024 Society of Thermal Engineers of Serbia. Published by the Vinča Institute of Nuclear Sciences, National Institute of the Republic of Serbia, Belgrade, Serbia. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International licence