THERMAL SCIENCE

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Peng Xu

,

Zhong-Liang Pan

THERMAL MODEL FOR 3-D INTEGRATED CIRCUITS WITH INTEGRATED MLGNR-BASED THROUGH SILICON VIA

ABSTRACT
This paper applies the multi-layer graphene nanoribbon as a new prospective filler material for through silicon via to solve the complex heat problems in the 3-D integrated circuits. An equivalent thermal model for 3-D integrated circuits with the MLGNR-based through silicon via is presented in this work, which take lateral heat transfer of through silicon via into account. The experimental results show that the heat transfer performance of MLGNR-based through silicon via is better than the conventional Cu-based through silicon via. Furthermore, it is found that the temperature predicted by the proposed model are in good accordance with the ANSYS simulation, and the maximum relative deviation is less than 4.0%
KEYWORDS
Thermal model, three-dimensional integrated circuits, MLGNR-based TSV
PAPER SUBMITTED: 2018-05-07
PAPER REVISED: 2018-10-24
PAPER ACCEPTED: 2018-11-18
PUBLISHED ONLINE: 2018-12-16
DOI REFERENCE: https://doi.org/10.2298/TSCI180507321X
CITATION EXPORT: view in browser or download as text file
THERMAL SCIENCE YEAR 2020, VOLUME 24, ISSUE Issue 3, PAGES [2067 - 2075]
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Thermal model for 3-D integrated circuits with integrated MLGNR-based through silicon via

© 2024 Society of Thermal Engineers of Serbia. Published by the Vinča Institute of Nuclear Sciences, National Institute of the Republic of Serbia, Belgrade, Serbia. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International licence