THERMAL SCIENCE
International Scientific Journal
THERMAL MANAGEMENT OF THE THROUGH SILICON VIAS IN 3-D INTEGRATED CIRCUITS
ABSTRACT
The through silicon via technology is a promising and preferred way to realize the reliable interconnection for 3-D integrated circuit integration. However, its size and the property of the filled-materials are two factors affecting the thermal behavior of the integrated circuits. In this paper, we design 3-D integrated circuits with different through silicon via models and analyze the effect of different material-filled through silicon vias, aspect ratio and thermal conductivity of the dielectric on the steady-state temperature profiles. The results presented in this paper are expected to aid in the development of thermal design guidelines for through silicon vias in 3-D integrated circuits.
KEYWORDS
PAPER SUBMITTED: 2018-02-20
PAPER REVISED: 2018-11-25
PAPER ACCEPTED: 2018-11-26
PUBLISHED ONLINE: 2019-09-14
THERMAL SCIENCE YEAR
2019, VOLUME
23, ISSUE
Issue 4, PAGES [2157 - 2162]
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