THERMAL SCIENCE

International Scientific Journal

THE TRANSIENT TEMPERATURE FIELD SIMULATION OF THE MICRO-GRID INVERTER

ABSTRACT
For the power electronics devices with the insulated gate bipolar transistors, the thermal management is very important and necessary for the devices reliability. In this paper, power losses of the inverter were evaluated based on its electro-thermal model and control logic. Accordingly, its thermal management system using forced air cooling is designed and simulated. The transient temperature filed simulation results showed that the thermal management system is feasible and can guarantee the working temperature of the inverter. Experimental results were also obtained to verify the simulation results in this paper.
KEYWORDS
PAPER SUBMITTED: 2017-09-30
PAPER REVISED: 2017-11-02
PAPER ACCEPTED: 2017-11-03
PUBLISHED ONLINE: 2017-12-23
DOI REFERENCE: https://doi.org/10.2298/TSCI170930251D
CITATION EXPORT: view in browser or download as text file
THERMAL SCIENCE YEAR 2018, VOLUME 22, ISSUE Supplement 2, PAGES [S391 - S399]
REFERENCES
  1. Hefner, A. R., Diebolt, D. M., An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator, Power Electronics Specialists Conference, Pesc '91 Record. IEEE. 1991, pp. 10-19
  2. Hefner, A. R., Modeling Buffer Layer IGBTs for Circuit Simulation, IEEE Trans. J. Power Electronics, 2(1995), pp. 111-123
  3. Ivensky, G., et al., Reducing IGBT Losses in ZCS Series Rresonant Converters, IEEE Trans. J. Industrial Electronics, 46(1999), pp. 67-74.
  4. Zheng, J., et al., Research on Heat Transfer in the High Power IGBT Module Based on Ansys, Power Electronics, 45(2011), 1, pp. 104-105
  5. Li, Q., et al., IGBT Power Loss Estimation Based on PSPICE Simulation, Electric power automation equipment, 25(2005), 1, pp. 31-33
  6. Zhang, X. J., et al., Modeling of Insulated Gate Bipolar Transistor(IGBT), Trans. China Welding Institution, 21(2000), 4, pp. 38-41
  7. Lu, G. S., Simplificational Model of IGBT in Protel99se, Proceedings of the EPSA, 15(2003), pp. 80-82
  8. Hao, X. H., et al., Efficient On-Chip Hotspot Removal Combined Solution of Thermoelectric Cooler and Mini-channel Heat Sink. Applied thermal engineering, 100 (2016), pp. 170-178
  9. Ahmed, M. M., Putrus G. A., A Method for Predicting IGBT Junction Temperature under Transient Condition, 34th Annual Conference of IEEE Industrial Electronics, 2008, pp. 454-459
  10. Hefner, A. R., A Dynamic Electro-Thermal Model for the IGBT, Industry Applications Society Meeting IEEE, 1(2002), pp. 1094-1104
  11. Yun, C. S., et al., Static and Dynamic Thermal Characteristics of IGBT Power Modules, The International Symposium on Power Semiconductor Devices and Ics, 1999, pp. 37-40
  12. Anandan, S. S., Ramalingam V., Thermal Management of Electronics: A Review of Literature. Thermal Science, 12(2008), pp. 5-26
  13. Liu, Z. J., He, J. H., Mathematical Models for Thermal Science. Thermal Science, 2017, pp. 100-100
  14. Sheng, K., et al., A Review of IGBT Models. Power Electronics IEEE Transactions on, 15 (2000), pp.1250-1266
  15. Igic, P., Jankovic, N., Review OF Advanced IGBT Compact Models Dedicated to Circuit Simulation, Facta Universitatis, 27(2014), pp. 13
  16. Lena, D., et al., A Compact IGBT Electro-Thermal Model in Verilog-A for Fast System Level Simulation. Conference of the IEEE Industrial Electronics Society, 2016, pp. 3793-3798
  17. Casanellas, F., Losses in PWM Inverters Using IGBTs. IEEE Electric power applications proceedings, 141(1994), pp. 235-239

© 2018 Society of Thermal Engineers of Serbia. Published by the Vinča Institute of Nuclear Sciences, Belgrade, Serbia. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International licence