TY - JOUR
TI - Thermal energy effect on optoelectronic characteristics of InGaAsN/GaAs laser diode under the variation of quantum well number
AU - Al-Ghamdi Mohammed Saad
JN - Thermal Science
PY - 2022
VL - 26
IS - 101
SP - 365
EP - 372
PT - Article
AB - A laser device based on InGaAsN quantum well active regions emitting at 1.26  mm is reported. The performances of the laser under the effect of thermal  energy are investigated in terms of threshold current, Ith, gain parameter,  gt, photon energy, hn, and cavity length, Lc. Four structures with one,  two, and three quantum wells along with a structure that have three quantum  wells with tensile strained barriers are proposed to study the relation  between the peak gain, gpeak, and photon energy. The founds show that  structures with one and two quantum wells operating at room temperature and  under pulse wave condition, exhibit a linear dependence of gpeak on both Lc  and photon energy. It is shown that the threshold current density, Jth,  increases at any temperature with the cavity length Lc ranging from 250 nm  to 1000 nm. Also, the investigation of the proposed structures shows that gt  decreases with increasing temperature, while the ratio of the cur-rent  density parameter to internal efficiency, Jt/hi, per well increases with the  quantum well number. A comparison was carried out for two particular  structures with three quantum wells and GaAsP barriers, the results show a  decrease in the threshold current per well.