TY - JOUR
TI - An analytical thermal model for the 3-D integrated circuit with new-type through silicon via
AU - Xu Zhao-Pei
AU - Wang Kang-Jia
JN - Thermal Science
PY - 2023
VL - 27
IS - 3
SP - 2391
EP - 2398
PT - Article
AB - Through silicon via technology is a promising and preferred way to realize the reliable interconnection for 3-D integrated circuit (3-D IC), which can transfer heat from multiple dies to the heat sink in vertical direction. In this paper, a new gen¬eral model of the through-silicon via (TSV) is proposed to investigate the thermal performance of the 3-D IC. The heat transfer characteristics of conical-annular TSV are studied for the first time. The impacts of different sidewall inclination angles and insulating layer thicknesses of TSV on the heat dissipation of 3-D IC were compared and analyzed in detail. As expected, our proposed model is in good agreement with the results of the existing models, which shows that the proposed model considering the lateral heat transfer and TSV structures can predict the distribution of temperature more efficiently and accurately. Furthermore, it is found that conical-annular TSV has more excellent heat dissipation performance.