TY - JOUR
TI - Numerical simulation of polysilicon deposition characteristics in chemical vapor deposition process
AU - An Lisha
AU - Yang Zhe
AU - Liu Yingwen
AU - Gao Bo
JN - Thermal Science
PY - 2018
VL - 22
IS - 12
SP - 719
EP - 727
PT - Article
AB - This paper addresses the complex component evolution and silicon dynamic  deposition characteristics in the traditional Siemens reactor. A  two-dimensional heat and mass transfer model coupled with a detailed chemical  reaction mechanism was developed. The distributions of temperature, velocity  and concentration is presented in detail. The influencing factors (such as  feeding mole ratio, inlet velocity, base temperature and reactor pressure) on  the molar concentration evolutions of ten major components and silicon growth  rate were obtained and analyzed. Results show that base temperature is main  influence of HCl mole fraction. In order to get more growth rate of silicon  and better silicon quality, the complex operating parameters need to be  reasonably designed on collaborative optimization.