TY - JOUR
TI - Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode
AU - Hsu Chih-Neng
AU - Chang Yu-Hao
AU - Liu Chang-Yuan
AU - Fang Shih-Hao
AU - Huang Chun-Chieh
JN - Thermal Science
PY - 2013
VL - 17
IS - 5
SP - 1277
EP - 1283
PT - Article
AB - This paper focuses on the heat transfer and structural stress analysis of the  micro- scale packaging structure of a high-power light emitting diode. The  thermal-effect and thermal-stress of light emitting diode are determined  numerically. Light emitting diode is attached to the silicon substrate  through the wire bonding process by using epoxy as die bond material. The  silicon substrate is etched with holes at the bottom and filled with high  conductivity copper material. The chip temperature and structure stress  increase with input power consumption. The micro light emitting diode is  mounted on the heat sink to increase the heat dissipation performance, to  decrease chip temperature, to enhance the material structure reliability and  safety, and to avoid structure failure as well. This paper has successfully  used the finite element method to the micro-scale light emitting diode heat  transfer and stress concentration at the edges through etched holes.