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NUMERICAL SIMULATION OF POLYSILICON DEPOSITION CHARACTERISTICS IN CHEMICAL VAPOR DEPOSITION PROCESS

ABSTRACT
This paper addresses the complex component evolution and silicon dynamic deposition characteristics in the traditional Siemens reactor. A two-dimensional heat and mass transfer model coupled with a detailed chemical reaction mechanism was developed. The distributions of temperature, velocity and concentration is presented in detail. The influencing factors (such as feeding mole ratio, inlet velocity, base temperature and reactor pressure) on the molar concentration evolutions of ten major components and silicon growth rate were obtained and analyzed. Results show that base temperature is main influence of HCl mole fraction. In order to get more growth rate of silicon and better silicon quality, the complex operating parameters need to be reasonably designed on collaborative optimization.
KEYWORDS
PAPER SUBMITTED: 2017-10-09
PAPER REVISED: 2017-12-17
PAPER ACCEPTED: 2017-12-18
PUBLISHED ONLINE: 2018-02-18
DOI REFERENCE: https://doi.org/10.2298/TSCI171009057A
CITATION EXPORT: view in browser or download as text file
THERMAL SCIENCE YEAR 2018, VOLUME 22, ISSUE Supplement 2, PAGES [S719 - S727]
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© 2018 Society of Thermal Engineers of Serbia. Published by the Vinča Institute of Nuclear Sciences, Belgrade, Serbia. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International licence